Analysis of Threshold Voltage of Biaxial Strained Silicon nMOSFET
DOI:
https://doi.org/10.51983/ajeat-2012.1.1.2499Keywords:
Biaxial Strained Silicon MOSFET, QME, Threshold Voltage, Si1-x GexAbstract
For nanoscale CMOS applications, strained-silicon devices have been receiving considerable attention owing to their potential for achieving higher performance and compatibility with conventional silicon processing. In this work we present the analysis of effect of strain on threshold voltage of biaxial strained-Si/Si1-x Gex nMOSFET taking into consideration the quantum mechanical effect (QME).
References
Himanshu Batwani, Mayank Gaur and M. Jagadesh Kumar, “Analytical Drain Current Model for Nanoscale Strained-Si/SiGe MOSFETs,” The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, Vol.28, pp.353-371, February 2009.
Yutao Ma, Zhijian Li, Litian Liu and Z.Yu, “MOS Structure Threshold Voltage Model Rigorously Considering Quantum Mechanical Effect,” Proc. 22nd International Conference on Microelectronics, Vol l.1, pp.14-17, May 2000.
H.M. Nayfeh, J.L. Hoyt, and D.A. Antoniadis, “A physically based analytical model for the threshold voltage of strained- Si n-MOSFETs,” IEEE Trans. Elec. Dev, 51(12), pp. 2069-2072, Dec. 2004.
Scott A. Hareland, Jallepali et al. “A Physically- Based Model for Quantization Effects in Hole Inversion Layers,” IEEE Trans, Vol.45, No.1, Janaruy 1998.
Ning Yang, W. Kirklen Henson, John R. Hasuer and Jimmie J. Wortman, “Modeling Study of Ultrathin Gate Oxides Using Direct Tnneling Current and Capacitance Voltage Measurements in MOS Devices,” IEEE Vol.46 No.7, July 1999.
Bratati Mukhopadhyay, Abhijit Biswas, PK Basu, G Eneman,P Verhenyen,E Simoen and C Clayes, “Modeling of Threshold Voltage and Subthreshold Slope of Strained –Si MOSFETs Including Quantum Effects,” Semiconductor Science Technology, 2008.
G. Chindalore, S.A. Hareland S.Jallepali, A.F.Tasch, C.M. Maziar,V.K.F. Chia, and S. Smith, “Experimental Determination of Threshold Voltage Shifts Due to Quantum Mechanical Effects in MOS Electron and Hole Inversion Layers,” IEEE Vol.18, No 5, May 1997.
M.A. Karim and Anisul Haque, “A Physically Based Accurate Model for Quantum Mechanical Correction to the Surface Potential of Nanoscale MOSFETs,” IEEE, Vol. 57, No.2, 2010.
Jin He, Mansun Chan, Xing Zhang and Yangquan Wang, “An Analytical Model to Account for Quantum-Mechanical Effects of MOSFETs Using a Parabolic Potential Well Approximation,” IEEE Vol.53 No.9, 2006
Vedatrayee Chakraborty, Bratati Mukhopadhyay and P. K. Basu, “A Compact Drift-diffusion Current Model of Strained-Si-Si1-xGex MOSFETs,” Proc. CODEC 2009.
S.M.Sze, “ Semiconductor devices Physics and Technology,” 2nd Edition, Wiley & Sons.
Karthik Cdandrakashan, Xing Zhou and Sia Ben Chiah, “Physics- Based Scalable Threshold-Voltage Model for Strained – Silicon MOSFETs,” Proc. NSTI Nanotech Vol.2, 2004.
Swagata Bhatacharjee and Abhijit Biswas, “Modeling of Threshold Voltage and Subthreshold Slope of Nanoscale DG MOSFETs ,” Journal of Semiconductor. Science and Technology, IOP Publishing Ltd, 2008
Jun-Wei Lue, Shu- Shen and Jian Bai Xia, “Quantum Mechanical Effects in Nanometer Field Transistors,” Applied Physics Letters, Vol.90 , Issue 14, 2007.
Yasuhisa Omera, Seiji Horiguchi Michihiar Tabe and Kenji Kishi, “Quantum-Mechanical Effects on the Threshold Voltage of Ultrathin- SOI nMOSFETs,” IEEE, Vol.14, No.12, 1993.
Amit Chaudhry, Garima Joshi, J N Roy and D.N Singh Strained Silicon MOSFET Structures for Nanoscale Applications: A Review,” Acta Technica Napocensis - Electronică şi Telecomunicaţii, Vol.51, No.3, pp.15-22, 2010.
Shiromani Balmukund Rahi, Garima Joshi, Prof. Renu Vig , “Analytical Model of Surface Potential of Biaxial Strained Silicon nMOSFET including Quantum Mechanical Effect,” Nanotech 2012.
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