Temperature Gradient and Quantum Transport in Nano Junctions

Authors

  • Mahesh Koti Dept. of Electronics and Communication Engineering, PES College of Engineering, Mandya, Karnataka, India
  • Vinaydatt V Kohir Dept. of Electronics and Communication Engineering, PDA College of Engineering, Gulbarga, Karnataka, India

DOI:

https://doi.org/10.51983/ajes-2017.6.1.1994

Keywords:

Seebeck co-efficient, Nano junction, Quantum dot, Landauer-Butticker

Abstract

In this paper the effect of temperature gradient on quantum transport in nano junctions is presented. The nano junction current density is shown to be proportional to the square of the temperature gradient. The effective delta variation in current density due to the temperature gradient is found to be dependent on the quantum system junction characteristics.

References

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Published

20-03-2017

How to Cite

Koti, M., & Kohir, V. V. . (2017). Temperature Gradient and Quantum Transport in Nano Junctions. Asian Journal of Electrical Sciences, 6(1), 15–17. https://doi.org/10.51983/ajes-2017.6.1.1994